Ultrabroadband terahertz field detection by proton-bombarded InP photoconductive antennas.

Photoconductive (PC) antennas fabricated on InP bombarded with 180 keV protons of different dosages (InP:H+) all exhibit a useful bandwidth of about 30 THz, comparable to that of the LT-GaAs PC antenna. The peak signal current of the best InP: H+ device (dosage of 10;15 ions/cm;2) is slightly higher than that of the LT-GaAs one, while the signal-to-noise ratio (SNR) of the former is about half of that of the latter due to lower resistivity. This suggests that InP: H+ can be a good substrate for THz PC antennas with proper annealing and/or implantation recipe.

Deep-ultraviolet Raman microspectroscopy: characterization of wide-gap semiconductors.

We have developed a high-throughput deep-ultraviolet (DUV) Raman microspectrometer with excitation from a continuous wave (cw) laser operated at 244 nm that enables us to characterize thin surface layers of wide-gap semiconductors. This spectrometer system consists of a filter spectrometer for the rejection of stray light and a high-dispersion spectrograph combined with a liquid nitrogen cooled charge-coupled device (CCD) detector and extends the low-frequency limit of the observable spectral range down to 170 cm(-1). In the microscope we use a Cassegrain reflective objective for the collection of the scattered light and an off-axis mirror for introduction of the excitation laser light. DUV Raman spectroscopy has been applied for studying wide-gap semiconductors including SiC and AlGaN epitaxial films and shallow implanted layers of these materials. Raman spectra of various crystals have also been measured for examining the performance of this system. Resonance enhancement of Raman bands has been observed for several semiconductors, and the results are discussed.

Dynamics of coherent anharmonic phonons in bismuth using high density photoexcitation.

We have investigated the dynamical properties of the coherent anharmonic phonons generated in Bi under high density excitation. The time-resolved reflectivity in the intensely photoexcited Bi film is modulated by the coherent A(1g) phonon oscillation with a time-dependent oscillation period. As the pump power density is increased, the line shape of the A(1g) mode in the Fourier transformed spectra becomes asymmetric, and the redshift of the phonon frequency is observed. Analysis of the transient redshift with a wavelet transform reveals that the frequency of the A(1g) mode depends on the squared amplitude of the oscillation, which is attributed to an anharmonicity of the lattice potential.